Plasma process method using an electrostatic chuck

Details Plasma process method using an electrostatic chuck Plasma process method using an electrostatic chuck

1993-02-12

1994-05-10

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, 437228, H01L 2100, H01L 2102, H01L 21306, B44C 122

Patent

active

053104536

ABSTRACT:
Prior to plasma etching, a wafer is placed on conductive support pins which extend through an electrostatic chuck. The electrostatic chuck is disposed on a susceptor incorporating a cooling jacket. A potential for electrostatic attraction is applied to the electrostatic chuck. The support pins are lowered while they are grounded, thus placing the wafer on the electrostatic chuck. Subsequently, the support pins are retracted into the electrostatic chuck to release contact between the wafer and themselves. A heat medium gas is then supplied between the wafer and the electrostatic chuck to improve the heat transfer rate therebetween. A plasma is then generated in a process chamber, and the wafer is etched by using the plasma. Since the heat transfer rate between the wafer and the electrostatic chuck is improved before the generation of the plasma, damage to the wafer due to heat can be prevented, and the starting time required to start an etching process is shortened.

REFERENCES:
patent: 5184398 (1993-02-01), Moslehi et al.
patent: 5221403 (1993-06-01), Nozawa et al.
patent: 5250137 (1993-10-01), Arami et al.
patent: 5255153 (1993-10-01), Nozawa et al.

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