Plasma process method and apparatus

Details Plasma process method and apparatus Plasma process method and apparatus

1997-10-17

1998-12-22

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

118719, 118723I, 118723IR, 118723MP, 1566431, 4272481, 427294, 427569, B05D 304

Patent

active

058516000

ABSTRACT:
Plasma processing gas is introduced into an upper portion of a processing vessel and a film-formation gas is simultaneously introduced into the vicinity of a substrate to be processed. The plasma processing gas is ionized to form a first plasma and any of the plasma processing gas that has temporarily recombined in locations close to the substrate to be processed is re-ionized as a second plasma. As a result, the density of etchant ions used for cutting away overhangs around the openings of grooves can be increased. In other words, the number of etchant ions can be increased. This makes it possible to reduce the bias voltage applied to the substrate to be processed, preventing damage thereto.

REFERENCES:
patent: 5431799 (1995-07-01), Mosely et al.
Jpn. J. Appl. Phys. vol. 35 (1996); pp. 1474-1477 (No month avail.).
J. Vac. Sci. Technol. B 12(1), Jan./Feb. 1994; pp. 449-453.
J. Vac. Sci. Technol. B 13(2), Mar./Apr. 1995; pp. 203-208.
SSDN proceedings, 29a-R-12; p. 393 (No date avail.).

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