Plasma process device

Details Plasma process device Plasma process device

2006-12-19

2006-12-19

Vo, Tuyet Thi (Department: 2821)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345480, C156S345240, C118S7230IR, C118S7230IR, C204S298080

Reexamination Certificate

active

07150805

ABSTRACT:
A plasma CVD system S includes: a matching circuit16that matches impedance of a RF generator1to impedance of a discharge electrode2so that incident power to become incident to the discharge electrode2from the RF generator1is set maximum and reflected power reflected from the discharge electrode2to the RF generator1is set minimum; and a generator control circuit that controls the power of the RF generator1according to change in impedance of the discharge electrode2which is matched by said matching circuit16. The matching circuit16includes a plurality of variable capacitors7, 8and a coil9, and changes each capacitance of the variable capacitors7, 8based on the incident power and the reflected power. The generator control circuit26controls the power of the RF generator1according to each capacitance of the variable capacitors7, 8.

REFERENCES:
patent: 5474648 (1995-12-01), Patrick et al.
patent: 5982099 (1999-11-01), Barnes et al.
patent: 6929712 (2005-08-01), Hanazaki et al.
patent: 2-256200 (1990-10-01), None
patent: 11-162697 (1999-06-01), None

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