Plasma process apparatus with in situ monitoring, monitoring met

Details Plasma process apparatus with in situ monitoring, monitoring met Plasma process apparatus with in situ monitoring, monitoring met

1998-10-14

2000-11-14

Mills, Gregory

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118715, H05H 100, C23C 1600

Patent

active

061464929

ABSTRACT:
A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 5322590 (1994-06-01), Koshimizu
patent: 5409562 (1995-04-01), Kumihashi et al.
patent: 5900105 (1999-05-01), Toshima
patent: 5928426 (1999-07-01), Aitchison

Affiliated with

Also associated with

Rating

Plasma process apparatus with in situ monitoring, monitoring met does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma process apparatus with in situ monitoring, monitoring met, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma process apparatus with in situ monitoring, monitoring met will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2061718