Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Patent
1995-02-27
1998-02-10
Pascal, Robert
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
31511121, 21912143, 20429837, 156643, 118723MR, B23K 1000, H05H 116
Patent
active
057172943
ABSTRACT:
A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.
REFERENCES:
patent: 4740268 (1988-04-01), Bukhman
patent: 5444207 (1995-08-01), Sekine et al.
Database WPI, Week 8411, Derwent Publications Ltd., London, GB; AN 84-063216 and DD-A-204 109 (Veb Zft Mikroelectr.), Nov. 1983.
Electronik, vol. 38, No. 3, Feb. 1989, Munchen De, pp. 59-62, K. Donohe, "Verbesserungen beim reaktiven Ionen-atzen".
Eguchi Kazuo
Horioka Keiji
Inazawa Koichiro
Ishikawa Yoshio
Ogasawara Masahiro
Kabushiki Kaisha Toshiba
Kinkead Arnold
Pascal Robert
Tokyo Electron Limited
Tokyo Electron Yamanashi Limited
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