Plasma procesor and plasma processing method

Details Plasma procesor and plasma processing method Plasma procesor and plasma processing method

2002-07-02

2011-11-15

Zervigon, Rudy (Department: 1716)

Coating apparatus

Gas or vapor deposition

With treating means

C118S724000, C118S728000, C156S345430, C156S345510, C156S345530, C156S345330

Reexamination Certificate

active

08056503

ABSTRACT:
An etching chamber1incorporates a focus ring9so as to surround a semiconductor wafer W provided on a lower electrode4. The plasma processor is provided with an electric potential control DC power supply33to control the electric potential of this focus ring9, and so constituted that the lower electrode4is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

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