Plasma pretreatment with BCl.sub.3 to remove passivation formed

Details Plasma pretreatment with BCl.sub.3 to remove passivation formed Plasma pretreatment with BCl.sub.3 to remove passivation formed

1982-07-26

1984-01-17

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, 252 791, H01L 21308

Patent

active

044262469

ABSTRACT:
The manufacture of VLSI devices is facilitated by a method for chlorine reactive sputter etching of silicon materials in a plasma reactor that has been passivated by a previous etching operation involving a fluorine-containing gas. The passivated reactor is reactivated for chlorine reactive sputter etching by the generation of a boron trichloride plasma in the reactor. In the preferred embodiment, a mixture of boron trichloride and chlorine is used to initiate the etching of the silicon material before pure chlorine is used to complete the etch. The invention permits silicon materials to be etched in a reactor in which chlorine and fluorine-containing gases are used sequentially.

REFERENCES:
patent: 3881971 (1975-05-01), Greer et al.
patent: 3971684 (1976-07-01), Muto
patent: 4106051 (1978-08-01), Dormer et al.
patent: 4214946 (1980-07-01), Forget
patent: 4255230 (1981-03-01), Zajac
patent: 4256534 (1981-03-01), Levinstein
patent: 4298443 (1981-11-01), Maydan
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4383885 (1983-05-01), Maydan
Bower, "Planar . . . NF.sub.3 " J. of Electrochemical Society vol. 129, No. 4 (4/82) pp. 795-799.
G. C. Schwartz and P. M. Schaible, "Reactive Ion Etching of Silicon", *Journal of Vacuum Science and Technology 16(2), Mar./Apr. 1979, p. 410.
W. W. Yao and R. H. Bruce, "Anisotropic Polysilicon Etching with Cl.sub.2 Plasma", *Electrochemical Society Extended Abstracts, vol. 81-2, Oct. 1981, p. 652.

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