Plasma oxidation processing method

Details Plasma oxidation processing method Plasma oxidation processing method

2011-08-02

2011-08-02

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21282, C257SE21283, C257SE21301, C438S772000, C438S787000

Reexamination Certificate

active

07989364

ABSTRACT:
A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012[cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator63, and a correction is made to the plasma process conditions.

REFERENCES:
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patent: 2005/0087296 (2005-04-01), Goto et al.
patent: 2005/0136610 (2005-06-01), Kitagawa et al.
patent: 2004 008519 (2004-01-01), None
patent: 2004 085704 (2004-10-01), None
Sekine, “Highly Reliable Ultrathin Oxide Film Formation at Low Temperature by Oxygen Radical Generated in High Density Krypton Plasma”, IEEE Transactions on Electron Devices, vol. 48 (8), p. 1550-1555 (2001).

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