Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-09-03
1997-09-16
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427580, 427249, B05D 306, C23C 1626
Patent
active
056678525
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
This invention relates to methods for obtaining diamond and diamond-like films and substrates from the gaseous phase, particularly, though not exclusively, for use in the electronics industry, and it may be used to form layers in passive and active electronic components, and also to obtain optical windows in the visible and infra-red regions of the spectrum, to form interference filters, and to provide coatings.
BACKGROUND ART
A previously proposed method for obtaining diamond and diamond-like films from hydrocarbons, for example from acetylene, includes the steps of forming an acetylene-oxygen mixture, feeding the mixture under atmospheric pressure to a torch, igniting the oxyacetylene flame and forming a diamond film on a substrate at a rate of 0.003-0.015 micron/sec. This method has been described in J. Appl. Phys. v. 68, N11, 1991, pp. 5941-5943. The disadvantage of this method is the comparatively low rate of formation of the coatings, and also the considerable lack of uniformity in thickness.
Another method that has previously been proposed for obtaining diamond and diamond-like films from a plasma jet has been described in J. Appl. Phys. v. 68, N12, 1990, pp. 6187-6190. This method includes forming a mixture of methane and hydrogen (about 5% methane in hydrogen), and using this mixture as a plasma-forming gas to ignite a plasma jet in a single-jet plasmatron with a tungsten anode and a tantalum cathode at a total pressure in the system of 400 torr. The consumption of the gaseous mixture is 1-2 liters/min and the arc current is equal to 10-12 A at a voltage of 60-90 V. The rate of formation of the films by this method reached 0.06-0.03 micron/sec.
In previously proposed arrangements for obtaining diamond and diamond-like films a plasma reaction zone is formed, a hydrocarbon-hydrogen mixture is then fed to the reaction zone, and a diamond film is obtained on a cooled substrate. The disadvantage of this method is also the relatively low rate of growth of the films, which is reflected in the productivity of the process, particularly when obtaining thick layers.
SUMMARY OF THE INVENTION
The technical result achieved by the presently proposed method results in a substantial increase in the growth rate of the films, i.e. in an increase in the productivity of the process, which is particularly important when producing thick films.
In one arrangement which will be described as an example of the present invention, a method for obtaining diamond and diamond-like films includes forming a plasma reaction zone, feeding a hydrocarbon-hydrogen mixture to the reaction zone, and depositing a film on a substrate, the reaction zone being formed by a plasma flux at atmospheric pressure and at a temperature T=10.sup.4 .degree. K., the flux including at least three axially symmetrically arranged convergent jets, and the film is being deposited while the substrate is passed at a high velocity not less than once through the flux zone.
DESCRIPTION OF A PREFERRED EMBODIMENTS
The presently proposed method is carried out in one embodiment as follows. Using a plurality of electrodes and an external arc, a plasma flux is generated at atmospheric pressure at a temperature T=10.sup.4 .degree. K. in the form of axially symmetrically arranged convergent jets of an inert gas with the current in the arc being of 10 to 20 A at a voltage of 90-100 V. A gaseous mixture of hydrocarbons in hydrogen is 10 introduced into the reaction zone of confluence at a rate of 0.1 to 10 liters/min and a cooled substrate is passed through the plasma flux at a temperature T=10.sup.4 .degree. K. at a rate of 0.1 to 10 meters/min (depending on the substrate material). The amount N of substrate passing through the plasma zone is chosen to be equal to or greater than 1.
By way of example, the formation of diamond and diamond-like films on a silicon substrate will now be considered. The substrate is mounted on a movable table arranged at a predetermined distance from the electrodes. A gaseous mixture of methane and hydrogen for
REFERENCES:
patent: 4645977 (1987-02-01), Kurokawa et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 5094878 (1992-03-01), Yamamoto et al.
patent: 5382293 (1995-01-01), Kawarada et al.
K.R. Stalder et al. "Plasma Properties of a Hydrocarbon Arcjet Used in the Plasma Deposition of Diamond Thin Films", Aug. 27, 1990., pp. 6187-6190.
R. S. Yalamanchi et al. "Diamond Growth in Combustion Flames" Jul. 13, 1990, pp. 5941-5943.
Patent Abstracts of Japan, unexamined applications, C Field, vol. 11,, No. 115, Apr. 10, 1987, The Patent Office Japanese Government, p. 136 C 415 & JP-A-61 259 778.
Gay John A.
Ivanov Vladimir V.
Kulik Pavel P.
Zornia Eugenia N.
King Roy V.
Overseas Publishers Association
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