Plasma in-situ treatment of chemically amplified resist

Details Plasma in-situ treatment of chemically amplified resist Plasma in-situ treatment of chemically amplified resist

2006-04-04

2006-04-04

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S705000, C438S709000, C438S710000, C438S725000, C430S296000, C430S313000, C430S328000

Reexamination Certificate

active

07022611

ABSTRACT:
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

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