Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2007-04-02
2009-10-20
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S010000, C438S776000, C438S508000, C257SE21293, C257SE21302, C257SE21528
Reexamination Certificate
active
07605008
ABSTRACT:
A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.
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Chua Thai Cheng
Cruse James P.
Czarnik Cory
Applied Materials Inc.
Fourson George
Patterson & Sheridan LLP
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