Plasma generating apparatus used for fabrication of semiconducto

Details Plasma generating apparatus used for fabrication of semiconducto Plasma generating apparatus used for fabrication of semiconducto

1996-08-05

1998-09-22

Tsai, Jey

Coating apparatus

Gas or vapor deposition

With treating means

118723IR, 118723AN, H05H 100, C23F 102

Patent

active

058109323

ABSTRACT:
An apparatus for generating plasma, includes a cylindrical vacuum chamber made of dielectric substance, the chamber being open only at a bottom thereof and having a height of 50 mm or smaller, at least one antenna coil disposed around the chamber for receiving high frequency power therein, and at least one electromagnetic coil disposed around the antenna coil. The cylindrical vacuum chamber may be replaced with a plate made of a dielectric substance. The apparatus is operative to carry out photoresist using etching without leaving any residue under a high selection ratio to the photoresist. In addition, the etching product does not tend to adhere to the vacuum chamber, and it would be easy to remove etching product from the vacuum chamber, even if the product adheres to the vacuum chamber.

REFERENCES:
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5476182 (1995-12-01), Ishizuka et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5556521 (1996-09-01), Ghanbari
patent: 5571366 (1996-11-01), Ishii et al.
patent: 5587038 (1996-12-01), Cecchi et al.
Extended Abstracts (The 56th Autumn Meeting, 1995), The Japan Society of Applied Physics, No. 2, pp. 536 No Month.

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