Plasma generating apparatus and method

Details Plasma generating apparatus and method Plasma generating apparatus and method

1994-08-17

1996-05-07

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 71, 156345, 118723MP, 118723E, 118723I, H05H 100

Patent

active

055137652

ABSTRACT:
A plasma generating apparatus includes a vacuum chamber, an inductive-coupling coil wound around the vacuum chamber, a pair of parallel-planar electrodes, each of which electrode has a center on a central axis of the inductive-coupling coil within the vacuum chamber, and is disposed vertically against the central axis, a radio-frequency power supply, and a radio-frequency matching circuit coupled to the radio-frequency power supply. The radio-frequency matching circuit is coupled to at least one of the inductive-coupling coil and the pair of parallel-planar electrodes. The pair of parallel-planar electrodes and the inductive-coupling coil driven by the radio-frequency power supply carry out capacitive-coupling and inductive-coupling so as to be associated with each other, so that capacitively-coupled plasma and inductively-coupled plasma are generated within the vacuum chamber.

REFERENCES:
patent: 4371412 (1983-02-01), Nishizawa
patent: 4844775 (1989-07-01), Keeble
patent: 4948458 (1990-08-01), Ogle
patent: 5234529 (1993-08-01), Johnson
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5304282 (1994-04-01), Flamm
patent: 5350479 (1994-09-01), Collins et al.
Bhattacharya, "System for Varying the Directionality in Plasma Etching", IBM Technical Disclosure Bulletin, vol. 20, No. 3, Aug. 1977.

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