Plasma generating apparatus and ion source using the same

Details Plasma generating apparatus and ion source using the same Plasma generating apparatus and ion source using the same

1998-02-13

2000-05-09

Shingleton, Michael B

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

250423R, 31511181, H05B 3702

Patent

active

060608366

ABSTRACT:
A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma. By disposing an extracting electrode at the opening of the plasma-generating vessel, ion beams can be extracted from the main plasma.

REFERENCES:
patent: 4980610 (1990-12-01), Varga
patent: 5677597 (1997-10-01), Tanaka
Eitaro Abe, "Microwave Technology," Tokyo University Shuppan-Kai, Nov. 30, 1985, 3rd Impression of 1st ed.

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