Plasma flood system for the reduction of charging of wafers duri

Details Plasma flood system for the reduction of charging of wafers duri Plasma flood system for the reduction of charging of wafers duri

1994-05-16

1995-03-21

Dzierzynski, Paul M.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250251, H01J 37317

Patent

active

053998715

ABSTRACT:
A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.

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patent: 4675530 (1987-06-01), Rose et al.
patent: 4806829 (1989-02-01), Nakao
patent: 4994674 (1990-02-01), Tamai et al.
patent: 5089710 (1992-02-01), Kikuchi
patent: 5262652 (1993-11-01), Bright et al.
patent: 5904902 (1990-02-01), Tamai et al.
Strain et al., "New approaches to charging control," Nuclear Instruments and Methods in Physics Research, vol. B55, 1991, pp. 97-103.
Nasser-Ghodsi et al., "A high-current ion implanter system," Nuclear Instruments and Methods in Physics Research, vol. B55, 1991, pp. 398,401.

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