Plasma etching with nitrous oxide and fluoro compound gas mixtur

Details Plasma etching with nitrous oxide and fluoro compound gas mixtur Plasma etching with nitrous oxide and fluoro compound gas mixtur

1983-07-05

1984-02-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044314779

ABSTRACT:
A process is disclosed for use in the manufacture of multilayer thin film integrated circuits for selective removal of specific layers, and a composition of matter useful in the process for selective etching of polysilicon and silicon nitrides during the manufacture of thin film integrated circuits. A multi-layer thin film integrated circuit is exposed to a plasma formed from a gaseous mixture of nitrous oxide and a fluoro compound. The nitrous oxide preferably comprises between 2.5% and 9.0% of the mixture and the fluoro compound preferably comprises between 91.0% and 97.5% of the mixture.

REFERENCES:
patent: 4374699 (1983-02-01), Sanders et al.
patent: 4381967 (1983-05-01), Sanders et al.

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