Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask resist contains organic compound
Patent
1997-02-28
1999-10-26
Utcoh, Benjamin L.
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
Mask resist contains organic compound
216 5, 216 55, 216 62, 216 72, 216 75, 216 79, H01J 902, B44C 122
Patent
active
059722355
ABSTRACT:
Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low pressure-high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 10.sup.11 ions/cm.sup.3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.
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"Damage Formed by Electron Cyclotron Resonance Plasma Etching on a Gallium Arsenide Surface"; Hara et. al., J. Appl. Phys. 67 (6), Mar. 15, 1990, pp. 2836-2839.
Hopwood, J., "Review of inductively coupled plasmas for plasma processing" Plasma Sources Sci. Technol. 1:109-116 (1992).
Horiike, Y., "Issues and Future Trends for Advanced Dry Etching" The Electrochemical Society, Incorporated, Proceedings of the Fourth International Symposium on Ultra Large Scale Integration Science and Technology ULSI Science and Technology (1993).
Sze, S., "Dry Etching" Semiconductor Devices Physics and Technology, Bell Telephone Laboratories, Inc. (1985) pp. 457-465.
Brigham Kristin
Pong Chungdee
Candescent Technologies Corporation
Goudreau George
Lo Elaine H.
Meetin Ronald J.
Utcoh Benjamin L.
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