Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1983-12-27
1984-12-25
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
044902093
ABSTRACT:
The disclosure relates to a plasma etch chemistry which allows a near perfectly anisotropic etch of silicon. A Cl-containing compound such as HCl has HBr added thereto, readily allowing the anisotropic etching of silicon. This is due to the low volatility of SiBr.sub.4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon passivates them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon.
REFERENCES:
patent: 4450042 (1984-05-01), Purdes
Comfort James T.
Groover Robert
Powell William A.
Sharp Melvin
Texas Instruments Incorporated
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