Plasma etching using a bilayer mask

Details Plasma etching using a bilayer mask Plasma etching using a bilayer mask

1991-07-22

1992-02-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156656, 156657, 1566591, 1566611, 156904, 20419237, B44C 122, C03C 1500, C03C 2506, C23F 100

Patent

active

050910477

ABSTRACT:
A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.

REFERENCES:
patent: 4092210 (1978-05-01), Hoepfner
patent: 4484978 (1984-11-01), Keyser

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