Plasma etching system and plasma etching method

Details Plasma etching system and plasma etching method Plasma etching system and plasma etching method

1995-04-27

1997-01-14

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

216 67, B44C 122

Patent

active

055935400

ABSTRACT:
The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

REFERENCES:
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4534816 (1985-08-01), Chen et al.
patent: 4612077 (1986-09-01), Tracy et al.
patent: 4931135 (1990-06-01), Horiuchi et al.
patent: 5022979 (1991-06-01), Hijikata et al.
patent: 5102523 (1992-04-01), Beisswenger et al.
patent: 5385624 (1995-01-01), Amemiya et al.

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