Plasma etching system and method

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S714000

Reexamination Certificate

active

07112533

ABSTRACT:
A system and a process for plasma etching a semiconductor device. The technique comprises periodically applying a heightened voltage bias during the plasma etching process so as to reduce accumulated charge on the surface of the semiconductor device during plasma etching of the device. In one embodiment, a heightened positive voltage and heightened negative voltage is applied to the semiconductor device while plasma etching is occurring to thereby induce charge to be removed from the semiconductor device.

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