Plasma etching process for refractory metal vias

Details Plasma etching process for refractory metal vias Plasma etching process for refractory metal vias

1989-11-14

1990-12-25

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156664, H01L 21306

Patent

active

049800183

ABSTRACT:
An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.

REFERENCES:
patent: 4358338 (1982-11-01), Downey et al.
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4502913 (1985-03-01), Lechaton et al.
patent: 4556628 (1985-12-01), Greshner et al.
patent: 4687539 (1987-08-01), Burns et al.
patent: 4713141 (1987-12-01), Tsang
Khoury, IBM Technical Disclosure Bulletin, vol. 25, No. 11A, 4/1983, "Real-Time Etch Plasma Monitor System", pp. 5721-5723.

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