Plasma etching process for making a microcircuit device

Details Plasma etching process for making a microcircuit device Plasma etching process for making a microcircuit device

1975-10-16

1977-05-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 156661, 156656, 156664, 204192E, 252 791, 427 88, C23F 102

Patent

active

040267423

ABSTRACT:
A method of making a microcircuit device wherein a uniform film of electrically conductive metal is deposited on the microcircuit surface and selectively removed from areas exposed through a mask. The improvement comprises the steps of contacting the exposed metal with a reactive halogenated gas in plasma state to convert the metal to a metal halide; and removing the metal halide to form a pattern of electrically conductive metal on the device.
The plasma can be generated in a reaction chamber with a high-frequency electromagnetic field. The process is useful in forming a desired pattern of metal for electrodes or wiring on a semiconductor substrate or other microcircuit base. The process is particularly useful for etching tungsten or molybdenum metal patterns.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3795557 (1974-03-01), Jacob
patent: 3837856 (1974-09-01), Irving et al.

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