Plasma etching process

Details Plasma etching process Plasma etching process

1989-02-21

1989-12-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156657, 1566591, 156662, 20419237, 252 791, 437233, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048865699

ABSTRACT:
A polysilicon layer or a single crystal silicon substrate is plasma etched in a two staged process. The first stage was a non-selective anisotropic etch to define a desired pattern by etching part way through the polysilicon. The second stage was a selective etch to secure remaining polysilicon and expose the substrate.

REFERENCES:
patent: 4457820 (1984-07-01), Bergeron et al.
patent: 4528066 (1985-07-01), Merkling et al.

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