Plasma etching process

Details Plasma etching process Plasma etching process

1994-03-04

1995-04-11

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156345, H01L 21306, B44C 122

Patent

active

054054915

ABSTRACT:
A process for fabricating a semiconductor device is enhanced by providing a plasma etching process in which exposed metal surfaces within a plasma etching chamber (24) are protected by a ceramic layer (46). In the plasma etching process, a substrate (10) is placed on a platen (26) located within a plasma etching apparatus (22). A clamping device (40) secures the perimeter of the substrate (10) to the platen (26). The clamping device (40) includes a ceramic layer (46) overlying a metal base (44). When a plasma is ignited within the etching chamber (24), the ceramic layer (46) prevents physical contact of the plasma and the metal base (44) of the clamping device (40).

REFERENCES:
patent: 5262029 (1993-11-01), Erskine et al.
patent: 5292399 (1994-03-01), Lee et al.
patent: 5304248 (1994-04-01), Cheng et al.
Applied Materials, Inc., Cross Sectional View of Process Chamber: AMAT 5000, Jul. 21, 1991.
Applied Materials, Inc., Process Kit For Clamping Mechanism, Jul. 21, 1991.

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