Plasma etching of semiconductors

Details Plasma etching of semiconductors Plasma etching of semiconductors

1995-09-29

1997-05-06

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

252 791, 438743, H01L 21302

Patent

active

056267169

ABSTRACT:
A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped oxides of silicon, silicon nitride, silicides and silicon.

REFERENCES:
patent: 5021121 (1991-06-01), Groechel et al.
patent: 5022958 (1991-06-01), Favreau et al.
patent: 5038713 (1991-08-01), Kawakami et al.
patent: 5160398 (1992-11-01), Yanagida
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5314575 (1994-05-01), Yanagida
patent: 5385633 (1995-01-01), Russell et al.
patent: 5436188 (1995-07-01), Chen
Article entitled "Plasma Damage Measurements on Si Wafer by Electrode-Less CV" by Hiromichi Enami et al., DPS 1994 Proceedings of Symposium on Dry Processing, Nov. 10-11, 1994, Tokyo, pp. 169-173.
An Article entitled "Analysis of Mechanisms of Highly Selective Oxide Etching" by H. Enomoto et al., 1994 Dry Process Symposium, pp. 241 to/ 246 .

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