Plasma etching of Cu-containing layers

Details Plasma etching of Cu-containing layers Plasma etching of Cu-containing layers

Filed on

2003-04-14

Date issued

2009-06-30

Examiner

Olsen, Allan (Department: 1792)

Patent Class

Etching a substrate: processes

SubClass

Gas phase etching of substrate

SubSubClass

Application of energy to the gaseous etchant or to the...

Other Related Categories

C216S078000

Type

Reexamination Certificate

Status

active

Patent number

07553427

Description

ABSTRACT:
A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.

REFERENCES:
patent: 4919750 (1990-04-01), Bausmith et al.
patent: 5700740 (1997-12-01), Chen et al.
patent: 5783459 (1998-07-01), Suzuki et al.
patent: 5998297 (1999-12-01), Brennan
patent: 2002/0197761 (2002-12-01), Patel et al.
patent: 07-161687 (1995-06-01), None
Written Opinion received in PCT/US03/10469 Nov. 12, 2004.

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