Plasma etching of Cu-containing layers

Details Plasma etching of Cu-containing layers Plasma etching of Cu-containing layers

2003-04-14

2009-06-30

Olsen, Allan (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S078000

Reexamination Certificate

active

07553427

ABSTRACT:
A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.

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Written Opinion received in PCT/US03/10469 Nov. 12, 2004.

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