Plasma etching of amorphous silicon (SE-35)

Details Plasma etching of amorphous silicon (SE-35) Plasma etching of amorphous silicon (SE-35)

1979-12-31

1981-08-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, 252 791, H01L 21306

Patent

active

042857627

ABSTRACT:
Amorphous silicon is selectively etched by concurrently exposing the silicon to a ionized plasma containing hydrogen and heating the silicon to a temperature of between about 150.degree. C. to about 350.degree. C. In one embodiment the selective etching technique is utilized to texture the surface of the amorphous silicon reducing the reflectivity thereof to less then about 5%.

REFERENCES:
patent: 3743847 (1973-07-01), Boland
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4217393 (1980-08-01), Staebler et al.

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