Plasma etching methods using nitrogen memory species for...

Details Plasma etching methods using nitrogen memory species for... Plasma etching methods using nitrogen memory species for...

2006-02-22

2008-08-12

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S058000, C438S706000, C438S710000

Reexamination Certificate

active

07410593

ABSTRACT:
Methods are described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing N2gas and one or more process gases into the chamber; and etching the substrate, wherein the introduction of the N2gas is stopped prior to etching, and wherein etching comprises an initial plasma ignition wherein at least a portion of the N2gas remains present in the chamber during initial plasma ignition. Additional methods are described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing N2gas and one or more process gases into the chamber; applying power to an electrode in the chamber such that an N2memory species is formed; and etching the substrate, where the introduction of the N2gas into the chamber can be stopped prior to etching. Other methods are also described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing N2gas into the chamber; applying power to an electrode in the chamber such that an N2memory species is formed; removing the applied power from the electrode in the chamber; stopping the introduction of the N2gas into the chamber and introducing one or more process gases into the chamber; and etching the substrate.

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