Plasma etching methods and contact opening forming methods

Details Plasma etching methods and contact opening forming methods Plasma etching methods and contact opening forming methods

2004-06-23

2009-11-10

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S013000, C216S017000, C216S018000, C216S038000, C438S700000, C438S714000, C438S723000, C438S734000

Reexamination Certificate

active

07615164

ABSTRACT:
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma generating electrode powerable at different first and second frequencies, with the first frequency being lower than the second frequency. A substrate is positioned over the electrode. A plasma is generated over the substrate with the electrode from a first applied power at the first frequency and a second applied power at the second frequency. A ratio of the first applied power to the second applied power is from 0 to 0.25 or at least 6.0. Material is etched from the substrate with the plasma.

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