Plasma etching method, plasma etching apparatus, control...

Details Plasma etching method, plasma etching apparatus, control... Plasma etching method, plasma etching apparatus, control...

2011-06-28

2011-06-28

Norton, Nadine (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S058000, C216S063000, C438S706000, C438S723000, C438S725000, C438S710000

Reexamination Certificate

active

07967997

ABSTRACT:
A plasma etching method includes: plasma etching a silicon oxide film to be etched that is positioned under a multi-layer resist mask by using the multi-layer resist mask formed on a substrate to be processed; and plasma etching a glass based film positioned under the silicon oxide film by using the multi-layer resist mask. In the method a gaseous mixture of C4F6gas and C3F8gas as a processing gas is used in the plasma etching of the glass based layer.

REFERENCES:
patent: 6784111 (2004-08-01), Donohoe et al.
patent: 6815353 (2004-11-01), Schlupp et al.
patent: 2006/0213866 (2006-09-01), Hirotsu et al.
patent: 2001-53061 (2001-02-01), None

Affiliated with

Also associated with

Rating

Plasma etching method, plasma etching apparatus, control... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etching method, plasma etching apparatus, control..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etching method, plasma etching apparatus, control... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2623455