Plasma etching method for aluminum-based films

Details Plasma etching method for aluminum-based films Plasma etching method for aluminum-based films

1980-08-14

1982-07-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 156656, 156665, 204192E, 204298, 252 791, C23F 102

Patent

active

043415938

ABSTRACT:
A plasma etching method includes placing a workpiece including an aluminum-based film with an exposed portion on a cathode arranged in opposition to an anode. A plasma generating gas consisting of carbon tetrachloride and chlorine is introduced between the cathode and the anode at a pressure of 0.1 Torr or less. The ratio of the partial pressure of the chlorine to the total pressure of the plasma generating gas is 0.8 or less. Then, a high frequency electric power is applied between the cathode and the anode to generate a plasma from the plasma generating gas. The exposed portion of the aluminum-based film is etched by the plasma thus generated.

REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4182646 (1980-01-01), Zajac
Preprint for 26th Applied Physics Meeting, 311 (1979) by K. Ueki et al. (Hitachi Ltd.).
Semiconductor Integrated Circuit Symposium . . . 15th Lecture Articles (Electrochemical Association), 60 (1979) by H. Kinoshita et al Toshiba (NTIS), pp. 60-65.

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