Plasma etching method and plasma etching apparatus

Details Plasma etching method and plasma etching apparatus Plasma etching method and plasma etching apparatus

2006-06-21

2009-02-24

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S513000, C257SE21170, C257SE21218, C257SE21229, C257SE21245

Reexamination Certificate

active

07494827

ABSTRACT:
The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.

REFERENCES:
patent: 5427055 (1995-06-01), Ichikawa
patent: 5484484 (1996-01-01), Yamaga et al.
patent: 6096371 (2000-08-01), Haaland et al.
patent: 6399177 (2002-06-01), Fonash et al.
patent: 6506665 (2003-01-01), Sato
patent: 2003-257946 (2003-09-01), None

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