Plasma etching method and apparatus therefor

Details Plasma etching method and apparatus therefor Plasma etching method and apparatus therefor

2008-09-19

2011-11-08

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S058000, C216S059000, C216S067000

Reexamination Certificate

active

08052886

ABSTRACT:
A fluorine-containing compound gas, e.g., SF6gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of light absorption of a reaction product, e.g., SiF4, for which, to be more precise, ranges from 9 μm to 10 μm, the light is irradiated onto a surface of an object to be processed from the light source. The SiF4molecules absorb the light, become activated and gain kinetic energy to be used in gaining an easy escape from a hole. As a consequence, an amount (a partial pressure) of fluorine radicals (F*) used as an etchant is increased and an etching rate of a silicon is increased.

REFERENCES:
patent: 4330384 (1982-05-01), Okudaira et al.
patent: 4377436 (1983-03-01), Donnelly et al.
patent: 4908292 (1990-03-01), Ide et al.
patent: 5200028 (1993-04-01), Tatsumi
patent: 5246529 (1993-09-01), Fukasawa et al.
patent: 6160621 (2000-12-01), Perry et al.
patent: 6200822 (2001-03-01), Becker et al.
patent: 6303512 (2001-10-01), Laermer et al.
patent: 6846424 (2005-01-01), Baum et al.
patent: 6939472 (2005-09-01), Schaadt et al.
patent: 7201852 (2007-04-01), Spitz et al.
patent: 2003/0147652 (2003-08-01), Green et al.
patent: 2007/0221258 (2007-09-01), Saito et al.

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