Plasma etching method and apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With radio frequency antenna or inductive coil gas...

Reexamination Certificate

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Reexamination Certificate

active

06926800

ABSTRACT:
A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.

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patent: 5888413 (1999-03-01), Okumura et al.
patent: 6056848 (2000-05-01), Daviet
patent: 6355183 (2002-03-01), Ohkuni
patent: 6564810 (2003-05-01), Raaijmakers et al.
patent: 1030297 (1998-11-01), None
patent: 10302997 (1998-11-01), None
patent: 11-92968 (1999-04-01), None
patent: 11-092968 (1999-04-01), None

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