Plasma etching method and apparatus

Details Plasma etching method and apparatus Plasma etching method and apparatus

1991-07-26

1999-05-04

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 75, 216 70, 438714, 438715, 438720, 438734, 438728, H01L 2100

Patent

active

059001623

ABSTRACT:
The present invention relates to a plasma etching method and apparatus, and more particularly to a plasma etching method and apparatus which are well suited for etching the samples of semiconductor device substrates, etc. In cooling a sample to a temperature not higher than 0.degree. C. which is a minimum temperature of water and subjecting the sample to an etching process with a gas plasma, an acceleration voltage which accelerates ions in the gas plasma toward the sample is repeatedly changed, whereby in a process based on low-temperature etching, an etching process producing no residue, being anisotropic and being highly selective is realized.

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patent: 4878995 (1989-11-01), Arikado et al.
patent: 4938839 (1990-07-01), Fujimura et al.

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