Plasma etching method and apparatus

Details Plasma etching method and apparatus Plasma etching method and apparatus

1999-05-04

2000-12-26

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 77, 134 11, 438906, C23F 102

Patent

active

061653772

ABSTRACT:
A plasma etching method includes the steps of placing a sample having metal a wiring portion on a sample table in a vacuum vessel, evacuating the vacuum vessel to establish a reduced pressure in the vacuum vessel, introducing an etching gas into the vacuum vessel while continuing to evacuate the vacuum vessel to maintain the reduced pressure in the vacuum vessel, and generating a plasma from the etching gas under the reduced pressure in the vacuum vessel using radio-frequency power. The plasma etches the metal wiring portion, and a residue forms on the metal wiring portion during the etching of the metal wiring portion by the plasma. The method further includes the step of applying to the sample table a bias voltage which periodically changes between two different voltages during the etching of the metal wiring portion by the plasma to remove the residue from the metal wiring portion.

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