Plasma etching method

Details Plasma etching method Plasma etching method

2007-03-27

2010-11-30

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S071000, C216S072000, C438S736000

Reexamination Certificate

active

07842190

ABSTRACT:
A plasma etching method includes the step of etching a lower organic material film by using an upper organic material film and an intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture including an O2gas and a carbon-containing compound gas which has a carbon atom in a molecule, to thereby transfer a pattern of the intermediate layer to the lower organic material film. A ratio of a flow rate of the carbon-containing compound gas to a total flow rate of the etching gas ranges from about 40 to 99%.

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