Plasma etching method

Details Plasma etching method Plasma etching method

2005-12-01

2009-02-10

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S719000, C438S720000

Reexamination Certificate

active

07488689

ABSTRACT:
In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.

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