Semiconductor storage device and method of manufacturing the...

Details Semiconductor storage device and method of manufacturing the... Semiconductor storage device and method of manufacturing the...

2004-09-01

2009-11-03

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C365S145000

Reexamination Certificate

active

07612398

ABSTRACT:
A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

REFERENCES:
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patent: 7078241 (2006-07-01), Son et al.
patent: 2002/0096771 (2002-07-01), Yamada et al.
patent: 2004/0094791 (2004-05-01), Ito et al.
patent: 2004/0185635 (2004-09-01), Tatsunari
patent: 2002-110932 (2002-04-01), None
patent: 2003-68987 (2003-03-01), None
patent: 2003-273328 (2003-09-01), None

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