Plasma etching method

Details Plasma etching method Plasma etching method

2006-07-17

2008-03-18

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S041000, C216S046000, C216S079000, C216S099000, C438S706000, C438S710000, C438S719000

Reexamination Certificate

active

07344652

ABSTRACT:
An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

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patent: 10-294367 (1998-11-01), None
patent: 2000-294626 (2000-10-01), None

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