Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-11-27
2007-11-27
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S723000, C438S724000, C252S079100
Reexamination Certificate
active
10935103
ABSTRACT:
A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.
REFERENCES:
patent: 6942816 (2005-09-01), Rusu et al.
patent: 2003/0164354 (2003-09-01), Hsieh et al.
patent: 2004/0155012 (2004-08-01), Rusu et al.
Inata Yasushi
Kato Kazuya
Kitamura Akinori
Kobayashi Noriyuki
Mizuno Hideki
Norton Nadine
Tokyo Electron Limited
Umez-Eronini Lynette T.
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