Plasma etching indium tin oxide using a deposited silicon nitrid

Details Plasma etching indium tin oxide using a deposited silicon nitrid Plasma etching indium tin oxide using a deposited silicon nitrid

1991-06-17

1993-07-27

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 1566611, 156667, B05D 100

Patent

active

052307719

ABSTRACT:
The use of a deposited silicon nitride mask permits higher power to be used when ITO is etched by a plasma containing CH.sub.3. and Ar.sup.+ thereby increasing the etch rate of ITO.

REFERENCES:
patent: 4878993 (1989-11-01), Rossi et al.
patent: 5032221 (1991-07-01), Roselle et al.

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