Plasma etching device

Details Plasma etching device Plasma etching device

2005-06-07

2005-06-07

Zervigon, Rudy (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345430, C156S345440, C118S7230ER, C118S7230AN

Reexamination Certificate

active

06902648

ABSTRACT:
A plasma etching device including a supply path supplying temperature adjustment gas into a process chamber, wherein the temperature adjustment gas is supplied, and a temperature of an interior of the process chamber is controlled, is disclosed. After etching of a wafer is completed, a control valve of the supply path is opened, and the temperature adjustment gas is supplied into the process chamber. A temperature of the temperature adjustment gas is adjusted to a target gas temperature corresponding to an ambient temperature of the interior of the process chamber, or the like. The high-temperature gas remaining in the process chamber is replaced by the temperature adjustment gas supplied from respective nozzle ports, whereby the interior of the process chamber can be cooled to a target temperature with high accuracy in a short amount of time.

REFERENCES:
patent: 4392915 (1983-07-01), Zajac
patent: 5937541 (1999-08-01), Weigand et al.
patent: 6638004 (2003-10-01), Berger et al.
patent: 08-115905 (1996-05-01), None
patent: 2000-345348 (2000-12-01), None
patent: 2002-043276 (2002-02-01), None

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