Plasma etching chamber for manufacturing semiconductor devices

Details Plasma etching chamber for manufacturing semiconductor devices Plasma etching chamber for manufacturing semiconductor devices

1998-11-03

2000-07-04

Jones, Deborah

Coating apparatus

Gas or vapor deposition

With treating means

156345, 20429816, 20429817, C23C 1600

Patent

active

060822953

ABSTRACT:
A plasma etching apparatus used in the semiconductor device fabrication process improves the uniformity of the etch process by ensuring the uniformity of a plasma gas. The apparatus includes magnetic coils surrounding an outer wall of an etching chamber for generating a magnetic field within the chamber to guide a plasma etch gas created by radio frequency (RF) energy. A power cable is connected to the magnetic coils for supplying power. A bracket, made of an insulating material, is attached at one side to the outer wall of the etching chamber and at an opposing side to the power cable.

REFERENCES:
patent: 3886387 (1975-05-01), Graham et al.
patent: 3994320 (1976-11-01), Dorsey et al.
patent: 4952273 (1990-08-01), Popov
patent: 5435900 (1995-07-01), Gorokhovsky
patent: 5742052 (1998-04-01), Noguchi et al.

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