Plasma etching apparatus and plasma etching method

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S707000, C438S714000, C438S719000, C438S725000

Reexamination Certificate

active

07396771

ABSTRACT:
A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

REFERENCES:
patent: 6514376 (2003-02-01), Collins et al.
patent: 2003/0086840 (2003-05-01), Himori et al.
patent: 2006/0016559 (2006-01-01), Kobayashi et al.
patent: 2006/0042754 (2006-03-01), Yoshida et al.
patent: 2006/0138085 (2006-06-01), Chien et al.
patent: 2006/0162661 (2006-07-01), Jung et al.
patent: 2005-028804 (2005-02-01), None
patent: 2005-056914 (2005-03-01), None
patent: 10-2005-0062695 (2005-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma etching apparatus and plasma etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etching apparatus and plasma etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etching apparatus and plasma etching method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2815002

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.