Plasma etching apparatus and plasma etching method

Details Plasma etching apparatus and plasma etching method Plasma etching apparatus and plasma etching method

2008-07-08

2008-07-08

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S707000, C438S714000, C438S719000, C438S725000

Reexamination Certificate

active

07396771

ABSTRACT:
A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

REFERENCES:
patent: 6514376 (2003-02-01), Collins et al.
patent: 2003/0086840 (2003-05-01), Himori et al.
patent: 2006/0016559 (2006-01-01), Kobayashi et al.
patent: 2006/0042754 (2006-03-01), Yoshida et al.
patent: 2006/0138085 (2006-06-01), Chien et al.
patent: 2006/0162661 (2006-07-01), Jung et al.
patent: 2005-028804 (2005-02-01), None
patent: 2005-056914 (2005-03-01), None
patent: 10-2005-0062695 (2005-06-01), None

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