Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1991-11-27

1994-06-14

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156345, 156627, 20429832, 20419230, H01L 2100

Patent

active

053207041

ABSTRACT:
A magnetron plasma etching apparatus comprises a chamber and a mount for supporting a substrate. A high-potential electrode connected to an RF power source is connected to the mount, and a low-potential electrode which is grounded is connected to the chamber. A rotary magnet is provided above the chamber, thereby generating a rotary magnetic field intersecting at right angles an electric field generated by both electrodes. An end-point detecting member for detecting an end-point of etching of the substrate is provided at the side of the chamber. The end-point detecting member collects mainly the light at a region near the rotation center of the magnetic field. That light component of a spectrum, which varies greatly with the progress of the etching, is extracted from the collected light, and the intensity of the light of this spectrum is converted to a first electric signal. The intensity of the collected light is converted to a second electric signal. The end-point detecting means calculates a ratio of the first and second electric signals, and the end-point of the etching is detected on the basis of the ratio.

REFERENCES:
patent: 4289188 (1981-09-01), Mizutani et al.
patent: 4491499 (1985-01-01), Jerde et al.
patent: 4569592 (1986-02-01), Osada
patent: 4906347 (1990-03-01), Tomita et al.
patent: 5045149 (1991-09-01), Nulty
patent: 5097430 (1992-03-01), Birang
patent: 5208644 (1993-05-01), Litvak et al.

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