Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1989-05-19
1990-10-16
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
156345, 20419232, 20429834, 20429837, C23F 102
Patent
active
049632426
ABSTRACT:
A plasma etching apparatus a first cathode electrode, an anode electrode, an annular second cathode electrode, a magnetic field applying unit and high-frequency power sources. An object to be etched is placed on the first cathode electrode. The anode electrode is arranged opposite to the first cathode electrode so as to be separated therefrom and connected to a constant potential source. The second cathode electrode is located between the first cathode electrode and the anode electrode and substantially surrounds the first cathode electrode in an insulated state. The magnetic field applying unit includes coils which generate lines of magnetic force passing through the annular second cathode electrode substantially parallel to a surface of the first cathode electrode on which the object to be etched is placed. The high-frequency power sources are respectively connected to the first and second cathode electrodes to generate a plasma by gas discharge, thereby generating ions near the first and second cathode electrodes.
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7th Dry Process Symp., 1985 High Rate Etching of Silicon Dioxide, K. Kim et al.
18th Conference SSDM, Tokyo 1986 Double-Source Excited Reactive Ion Etching and Its Application to Submicron Trench Etching, M. Sato et al., pp. 233-236.
Arita Yoshinobu
Sato Masa-aki
Nguyen Nam X.
Nippon Telegraph and Telephone Corporation
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