Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1991-11-27

1994-03-01

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118715, 118725, 118723R, 20429833, 20429807, 20429808, H01L 2100

Patent

active

052903818

ABSTRACT:
A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.

REFERENCES:
patent: 4508161 (1985-04-01), Holden
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4609037 (1986-09-01), Wheeler et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 4931135 (1990-06-01), Horiuchi et al.
patent: 5078851 (1992-01-01), Nishihata et al.
Database WPIL, Derwent Publications Ltd., AN 89-359386, & JP-A-1 268 030, & U.S. Pat. No. 5,085,750, "Plasma Etching System for Semiconductor Device Mfr.-Has Gas Plasma Generator Sample Platform for Dividing Sample in Coolant Using Gas Laser".

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