Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

2005-02-01

2005-02-01

Mills, Gregory (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

Reexamination Certificate

active

06849154

ABSTRACT:
A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power to the upper electrode, a second high frequency power source for applying a second high frequency power having a frequency lower than the frequency of the first high frequency power to the lower electrode. A third high frequency power source for superposing a third high frequency power having a frequency lower than that of the first high frequency power and higher than that of the second high frequency power on the first high frequency power. A phase controller for adjusting the phase difference between the second high frequency power and the third high frequency power.

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patent: 10041281 (1998-02-01), None
Translation of International Preliminary Examination Report.

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